(China (Mainland))
Product Summary
The TC55257DFL-70L is a 262, 144-bit static random access meomory (SRAM) organized as 32,768 words by 8 bits. Fabricated using CMOS Silicon gate process technology of the Toshiba, the TC55257DFL-70L operates from a single 2.7V to 5.5V power supply. The TC55257DFL-70L is automatcially placed in low-power mode at 0.3μA standby current (typ) when chip enable (CE) is asserted high.
Parametrics
TC55257DFL-70L absolute maximum ratings: (1) power supply voltage VDD: -0.3V to 7.0V; (2) Input Voltage VIN: -0.3V to 7.0V; (3) Input/Output Voltage VI/O: -0.5V to VDD +0.5V; (4) Power Dissipation PD: 1.0/0.5W; (5) Soldering temperature (10S) : 260°C; (6) Storage Temperature: -55 to +150°C; (7) Operating Temperature: 0 to 70°C.
Features
TC55257DFL-70L features: (1) low-power dissipation operating: 27.5mW/MHz; (2) Standby current of 2μA (maximum ) at Ta=25°C; (3) Single power supply voltage if 2.7V to 5.5V; (4) Power down features using CE; (5) Data retention supply voltage of 2 to 5.5V; (6) Direct TTL compatibility for all inputs and outputs.
Diagrams
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 TC55257DFL-70L |
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Negotiable |
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