Product Summary
The STP3NK90Z is a zener-protected SuperMESH power mosfet. The STP3NK90Z is obtained through an extreme optimization of well established strip-base PowerMesh layout of ST. Applications of the STP3NK90Z include high current, high speed swtiching, ideal for off-line power supplies, adaptors and PFC and lighting.
Parametrics
STP3NK90Z absolute maximum ratings: (1) Drain-source Voltage (VGS=0) , VDS: 900V; (2) Drain-gateVoltage(RGS=20kΩ) VDGR: 900V; (3) Gate-sourceVoltage VGS: ±30A; (4) Drain Current(continuous) at Tc=25°C, ID: 3A ; (5) (RGS=20kΩ) VDGR: 900V; (6) Gate-sourceVoltage VGS: ±30A; (7) Drain Current(continuous) at Tc=100°C, ID: 1.89A; (8) Drain Current(pulsed) IDM: 12A; (9) Total Dissipationation Tc=25°C, PTOT: 90A; (10) Derating Factor: 0.72W/°C; (11) Gate source ESD (HBM-C=100pF,R=1.5KΩ) , VESD (G-S) : 4000V; (12) Peak Diode Recovery voltage slope, dv/dt: 4.5V/ns; (13) Insulation With stand Voltage (DC) VISO: 2500V; (14) Operating Junction Temperature, Storage Temperature: -55 to 150°C.
Features
STP3NK90Z features: (1) typical RDS (on)=4.1Ω; (2) extremely high dv/dt capablity; (3) gater charge minimized; (4) 100% avalanche tested; (5) very low intrinsic capacitances; (6) very good manufacturing repeatiblity.
Diagrams
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![]() MOSFET N-Ch 900 Volt 3 Amp Zener SuperMESH |
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![]() STP3NK90ZFP |
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![]() MOSFET N-CH 900V 3A TO-220FP |
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