(China (Mainland))
Product Summary
The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57006 superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage, V(BR)DSS: 65V; (2)Gate-Source Voltage, VGS: ±20V; (3)Drain Current, ID: 1A; (4)Power Dissipation (at Tc = 70℃), PDISS: 20W; (5)Operating Junction Temperature, Tj Max: 165℃; (6)Storage Temperature, TSTG: -65 to +150℃.
Features
Features: (1)N-channel enhancement-mode lateraL MOSFETs; (2)excellent thermal stability; (3)common source configuration; (4)POUT = 6 W with 15 dB gain at 945 MHz/28V; (5)new RF plastic package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 PD57006 |
STMicroelectronics |
Transistors RF MOSFET Power N-Ch 65 Volt 1.0 Amp |
Data Sheet |
Negotiable |
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PD57006-E |
STMicroelectronics |
Transistors RF MOSFET Power RF POWER TRANS |
Data Sheet |
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PD57006S |
STMicroelectronics |
Transistors RF MOSFET Power N-Ch 65 Volt 1.0 Amp |
Data Sheet |
Negotiable |
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PD57006S-E |
STMicroelectronics |
Transistors RF MOSFET Power POWER R.F. |
Data Sheet |
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PD57006STR-E |
STMicroelectronics |
Transistors RF MOSFET Power RF Power Transistor N Chnl |
Data Sheet |
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PD57006TR |
STMicroelectronics |
Transistors RF MOSFET Power N-Ch 65 Volt 1.0 Amp |
Data Sheet |
Negotiable |
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PD57006TR-E |
STMicroelectronics |
Transistors RF MOSFET Power POWER R.F. |
Data Sheet |
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