(China (Mainland))
Product Summary
The IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The IS61LV12816L fabricated using high-performance CMOS technology of the ISSI. The IS61LV12816L is packaged in the JEDEC standard 44-pin TSOP (Type II) , 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm) .
Parametrics
IS61LV12816L-8TL absolute maximum ratings: (1) Power Supply Voltage Relative to GND VDD: -0.5V to 4.0V; (2)Terminal Voltage with Respect to GND VTERM: -0.5V to VDD +0.5V; (3) Storage Temperature Tstg: -65 to +150°C; (4) Power Dissipation PT: 1.0W.
Features
IS61LV12816L-8TL features: (1) High-speed access time: 8, 10ns; (2) Operating Current: 50mA (typ.) ; (3) Stand by Current: 700μA (typ.) ; (4) TTL and CMOS compatible interface levels; (5) Single 3.3V power supply; (6) Fully static operation: no clock or refresh required; (7) Three state outputs; (8) Data control for upper and lower bytes; (9) Industrial temperature available; (10) Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IS61LV12816L-8TL |
ISSI |
SRAM 2Mb 128Kx16 10ns 3.3V |
Data Sheet |
Negotiable |
|
||||
|
IS61LV12816L-8TL-TR |
ISSI |
SRAM 2Mb 128Kx16 10ns 3.3V |
Data Sheet |
Negotiable |
|
||||
