(China (Mainland))
Product Summary
The K6R1008V1D-TC10 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1008V1D-TC10 uses 4 common input and output lines and hasan output enable pin which operates faster than address access time at read cycle. The The K6R1008V1D-TC10 is fabricated using advanced CMOS process of the SANSUNG and designed for high-speed circuit technology. The K6R1008V1D-TC10 is particularly well suited for use in high-density high-speed system applications.
Parametrics
K6R1008V1D-TC10 absolute maximum ratings: (1) Voltage on Any Pin Relative to VSS, VIN, VOUT: -0.5 to Vcc +0.5V; (2) CC Supply Relative to Vcc Voltage on VSS, VCC: -0.5 to 7.0V; (3) Power Dissipation Pd: 1W; (4) Storage Temperature TSTG: -65 to 150°C; (5) Operating Temperature Commercial TA: 0 to 70°C, Industrial, TA: -40 to 85°C.
Features
K6R1008V1D-TC10 features: (1) Fast Access Time 10ns(Max.) ; (2) Power Dissipation Standby (TTL) : 20mA(Max.) , (CMOS) : 5mA(Max.) ; (3) Single 5.0V ±10% Power Supply; (4) TTL Compatible Inputs and Outputs; (5) I/O Compatible with 3.3V Device; (6) Fully Static Operation; (7) Three State Outputs; (8) Center Power/Ground Pin Configuration; (9) Operating in Commercial and Industrial Temperature range.
Diagrams
