(China (Mainland))
Product Summary
The IXTQ140N10P is a power mosfet with with N-channel enchancment mode avalanche rated.
Parametrics
IXTQ140N10P absolute maximum ratings: (1) TJ=25°C to 175°C, VDDS: 100V; (2) Tj=25°C to 175°C; RGS=1MΩ, VDG: 100V; (3) Continuous VGS: ±20V; (4) Continuous VGSM: ±30V; (5) Tc=25°C, ID25: 140A; (6) External lead current limit, ID (RMS) : 75A; (7) Tc=25°C, pulse width limited by TJM: 300A; (8) Tc=25°C, IAR: 60A; (9) Tc=25°C, EAR: 80mJ; (10) Tc=25°C, EAS: 2.5J; (11) dv/dt, IS≤IDM, di/dt≤100A/μS, VDD≤VDSS, Tj≤150°C, RG=4Ω: 10V/nS; (12) Tc=25°C, PD: 600W; (13) TJ: -55 to +175°C, TJM: 175°C, Tstg: -55 to +150°C; (14) 1.6 mm (0.062 in.) from case for 10s, TL: 300°C, Plastic body for 10s, TSOLD: 260°C; (15) Mounting torque(TO-3P) , Md: 1.13/10Nm/lb.in.
Features
IXTQ140N10P features: (1) International standard packages; (2) Unclamped Inductive Switching (UIS) rated; (3) Low package inductance; (4) easy to drive and to protect.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXTQ140N10P |
Ixys |
MOSFET 140 Amps 100V 0.011 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXTQ 30N60P |
Other |
|
Data Sheet |
Negotiable |
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IXTQ100N25P |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
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IXTQ102N15T |
Ixys |
MOSFET 102 Amps 150V 18 Rds |
Data Sheet |
Negotiable |
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|
IXTQ102N20T |
Ixys |
MOSFET 102 Amps 200V 22 Rds |
Data Sheet |
Negotiable |
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|
IXTQ102N25T |
Ixys |
MOSFET 102 Amps 250V 29 Rds |
Data Sheet |
Negotiable |
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IXTQ10P50P |
Ixys |
MOSFET -10.0 Amps -500V 1.000 Rds |
Data Sheet |
Negotiable |
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