Product Summary

The 30G122 is plasma display panels. The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction. Unlike MOSFETs, the IGBT does not have an integral reverse diode, since the collector contact is made on the p+ layer. The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

Parametrics

Specifications: (1)Place of Origin: Taiwan; (2)Brand Name: TOSHIBA; (3)Package Type: Throught Hole; (4)Model Number: GT30G122; (5)Type: IGBT; (6)Breakdown Voltage Vces: 400V; (7)Ic: 120A; (8)Used: Plasma display panels.

Features

Features: (1)IGBTs also featuring fast switching; (2)Low collector-emitter saturation voltage even in the large current area; (3)IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications; (4)High input impedance allows voltage drives; (5)Available in a variety of packages.

Diagrams

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