Product Summary
The IRG4PSH71K is an insulated gate bipolar transistor.
Parametrics
IRG4PSH71K absolute maximum ratings: (1) Collector-to-Emitter Breakdown Voltage VCES: 1200V; (2)Continuous Collector Current IC@TC=25°C: 78A; (3) CContinuous Collector Current IC@TC=100°C: 42A; (4) Pulsed Collector Current ICM: 156A; (5) Clamped Inductive Load Current ILM: 156A; (6) Short Circuit Withstand Time tSC: 10μS; (7) Gate-to-Emitter Voltage: ±20V; (8) Reverse Voltage Avalanche Energy EARV: 170mJ; (9) Maximum Power Dissipation PD@Tc=25°C: 350W; (10) PD@TC=100°C, Maximum Power Dissipation: 140W; (11) Operating Junction and Storage Temperature Range: -55 to +150°C.
Features
IRG4PSH71K features: (1) Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins; (2) High short circuit rating IGBTs, optimized for motorcontrol; (3) Minimum switching losses combined with low conduction losses; (4) Creepage distance increased to 5.35mm; (5) Tightest parameter distribution.
Diagrams

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![]() IRG4PSH71K |
![]() International Rectifier |
![]() IGBT UFAST 1200V 78A SUPER-247 |
![]() Data Sheet |
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![]() IRG4PSH71KD |
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![]() IGBT W/DIODE 1200V 78A SUPER-247 |
![]() Data Sheet |
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![]() IRG4PSH71KDPBF |
![]() International Rectifier |
![]() IGBT Transistors 1200V UltraFast 4-20kHz |
![]() Data Sheet |
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![]() |
![]() IRG4PSH71KPBF |
![]() International Rectifier |
![]() IGBT Transistors 1200V UltraFast 4-20kHz |
![]() Data Sheet |
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(China (Mainland))











