Product Summary

The IRFB9N60A is a Hexfet power mosfet. The IRFB9N60A from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRFB9N60A absolute maximum ratings: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C: 9.2A; (2) ontinuous Drain Current, VGS@10V, ID@Tc=100°C: 5.8A; (3) Pulsed Drain Current IDM: 37A; (4) Power Dissipation PD@Tc=25°C: 170W; (5) Linear Derating Factor: 1.3W/°C; 96) Gate-to-Source Voltage VGS: ±30V; (6) Single Pulse Avalanche Energy EAS: 290mJ; (7) Avalanche Current IAR: 9.2A; (8) Repetitive Avalanche Energy EAR: 17mJ; (9) Peak Diode Recovery dv/dt: 5.0V/ns; (10) Operating Junction and Storage Temperature Range: -55 to +150°C; (11) Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) .

Features

IRFB9N60A features: (1) Dynamic dv/dt Rating; (2) Repetitive Avalanche Rated; (3) Fast Switching; (4) Ease of Paraleling; (5) Simple Drive Requirements.

Diagrams

IRFB9N60A Test Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB9N60A
IRFB9N60A
Vishay/Siliconix
MOSFET N-Chan 600V 9.2 Amp
Data Sheet
0-725: $1.96
725-1000: $1.88
1000-2000: $1.84
IRFB9N60A, SiHFB9N60A
IRFB9N60A, SiHFB9N60A
Other

Data Sheet
Negotiable 
IRFB9N60APBF
IRFB9N60APBF
Vishay/Siliconix
MOSFET N-Chan 600V 9.2 Amp
Data Sheet
0-1: $1.51
1-10: $1.22
10-100: $1.09
100-250: $0.97