(China (Mainland))
Product Summary
The STD3NK60Z is a zener-protected SuperMESH power mosfet. Applications of the STD3NK60Z include: high current, high speed switching, ideal for off-line power suppliers, adaptors and PFC and lighting.
Parametrics
STD3NK60Z absolute maximum ratings: (1) Drain-source Voltage (VGS) VDS: 600V; (2) Drain-gate Voltage (RGS=20kΩ) VDGR: 600V; (3) Gate-source Voltage VGS: ±30V; (4) Drain Current(continuous) at Tc=25°C: 2.4A; (5) Drain Current(continuous) at Tc=100°C: 1.51A; (6) Drain Current (pulsed) IDM: 9.6A; (7) Total Dissipation at Tc=25°C: 45W; (8) Derating Factor: 0.36W/°C; (9) Gate source ESD (HBM-C=100pF, R=1.5KΩ) : 2100V; (10) Peak Diode Recovery voltage slope dv/dt: 4.5V/ns; (11) Insulation With stand Voltage (DC) : 2500V; (12) Operating Junction Temperature, Storage Temperature: -55 to 150°C.
Features
STD3NK60Z features: (1) typical RDS (on) =3.3Ω; (2) extremely high dv/dt capability; (3) 100% avalanche tested; (4) gate charge minimized; (5) very low intrinsic capacitances; (6) very good manufacturing repeatibility.
Diagrams
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| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 STD3NK60Z-1 |
STMicroelectronics |
MOSFET N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A |
Data Sheet |
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STD3NK60ZD |
STMicroelectronics |
MOSFET N-Ch, 600V-3.3ohms 2.4A |
Data Sheet |
Negotiable |
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STD3NK60ZT4 |
STMicroelectronics |
MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH |
Data Sheet |
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