(China (Mainland))
Product Summary
The MW7IC18100N is a Rf Ldmos Wideband Integrated Power Amplifier. This multi -stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA. The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz.
Parametrics
MW7IC18100N absolute maximum ratings: (1)Drain-Source Voltage: -0.5Vdc to +65 Vdc; (2)Gate-Source Voltage: -0.5Vdc to +6 Vdc; (3)Storage Temperature Range: -65℃ to +200℃; (4)Operating Junction Temperature: 200℃.
Features
MW7IC18100N features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked); (3)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function; (4)Integrated ESD Protection; (5)200℃ Capable Plastic Package; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MW7IC18100NBR1 |
Freescale Semiconductor |
RF Amplifier HV7 1990MHZ |
Data Sheet |
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MW7IC18100NR1 |
Freescale Semiconductor |
RF Amplifier HV7 1990MHZ |
Data Sheet |
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