(China (Mainland))
Product Summary
The IRG4PF50WD is an insulated gate bipolar transistor with ultrafast soft recovery diode.It hasLower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz. The IRG4PF50WD is optimized for performance with IGBTs and is Minimized recovery characteristics reduce noise, EMI and switching losses.
Parametrics
IRG4PF50WD absolute maximum ratings: (1)Collector-to-Emitter Breakdown Voltage: 900 V; (2)Continuous Collector Current: 51 A; (3)Continuous Collector Current: 28 A; (4)Pulsed Collector Current: 204 A; (5)Clamped Inductive Load Current: 204 A; (6)Diode Continuous Forward Current: 16 A; (7)Diode Maximum Forward Current: 204 A; (8)Gate-to-Emitter Voltage: ± 20 V; (9)Maximum Power Dissipation(PD @ TC = 25℃): 200 W; (10)Maximum Power Dissipation(PD @ TC = 100℃): 78 W; (11)Operating Junction and Storage Temperature Range: -55℃ to + 150℃.
Features
IRG4PF50WD features: (1)Optimized for use in Welding and Switch-Mode Power Supply applications; (2)Industry benchmark switching losses improve efficiency of all power supply topologies; (3)50% reduction of Eoff parameter; (4)Low IGBT conduction losses; (5)Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability; (6)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (7)Industry standard TO-247AC package.
Diagrams
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 IRG4PF50WD |
International Rectifier |
IGBT W/DIODE 900V 51A TO-247AC |
Data Sheet |
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IRG4PF50WD-201P |
International Rectifier |
IGBT Modules |
Data Sheet |
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IRG4PF50WDPBF |
International Rectifier |
IGBT Transistors 900V Warp 20-100kHz |
Data Sheet |
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