Product Summary
DS1245Y-120 is a 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. The DS1245Y-120 executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low) . The DS1245Y-120 is shipped from Dallas Semiconductor with its lithium energy source disconnected, guaranteeing full energy capacity.
Parametrics
DS1245Y-120 absolute maximum ratings: (1) Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2) Operating Temperature: 0 tp 70°C, -40°Cto +85°C for Ind parts; (3) Storage Temperature: -40 to +70°C, -40°Cto +85°C for Ind parts; (4) Soldering Temperature: 260°C for 10 seconds.
Features
DS1245Y-120 features: (1) 10 years minimum data retention in the absence of external power; (2) Data is automatically protected during power loss; (3) Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory; (4) Low-power CMOS; (5) Read and write access times as fast as 70ns; (6) Optional industrial temperature range of -40 TO +85°C, designated IND; (7) JEDEC standard 32-pin DIP package; (8) Detachment feature on PowerCap allows easy removal using a regular screwdriver.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||
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DS1245Y-120 |
Maxim Integrated Products |
NVRAM 1024K SRAM Nonvolatile |
Data Sheet |
Negotiable |
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DS1245Y-120+ |
Maxim Integrated Products |
NVRAM 1024K SRAM Nonvolatile |
Data Sheet |
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DS1245Y-120IND+ |
Maxim Integrated Products |
NVRAM 1024K SRAM Nonvolatile |
Data Sheet |
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DS1245Y-120IND |
Maxim Integrated Products |
NVRAM 1024K SRAM Nonvolatile |
Data Sheet |
Negotiable |
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