(China (Mainland))
Product Summary
The STB20NK50Z is a zener-protected SuperMesh mosfet. The STB20NK50Z is obtained through an extreme optimization of well established strip-based PowerMESH layout of the ST. Applications of the STB20NK50Z include: high current, high speed switching, ideal for off-line power supplies, adaptors and PFC.
Parametrics
STB20NK50Z absolute maximum ratings: (1) Drain-source Voltage (VGS-0) VDS: 600V; (2) Drain-gate Voltage(VGS=20Ω) VDGR: 500V; (3) Gate-source Voltage VGR: ±30V; (4) Drain Current (continuous) at Tc=25°C, ID: 17A; (5) Drain Current (continuous) at Tc=100°C, ID: 10.71A; (6) Drain Current (pulsed) IDM: 68A; (7) Total Dissipation at Tc=25°C, Ptot: 190W; (8) Derating Factor: 1.51W/°C; (9) Gate source ESD(HBM-C=100pF ,R=1.5KΩ) VESD (G-S) : 6000V; (10) Peak Diode Recovery voltage slope dv/dt: 4.5V/ns; (11) Operating Junction Temperature, Storage Temperature: -55 to 150°C.
Features
STB20NK50Z features: (1) typical RDS (on) =0.23Ω; (2) extremely high dv/dt capability; (3) 100% avalanche testedgate charge minimized; (4) very low intrinsic capacitances; (5) very good manufacturing repeatibility.
Diagrams
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 STB20NK50Z |
Other |
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Data Sheet |
Negotiable |
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STB20NK50Z-S |
Other |
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Data Sheet |
Negotiable |
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STB20NK50ZT4 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 17 Amp Zener SuperMESH |
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